PDN2312S mosfets equivalent, n-channel mosfets.
* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications
Appli.
SOT23-3S Pin Configuration
D
D
S G
G S
BVDSS 20V
RDSON 19m
ID 6.7A
Features
* 20V, 6.7A, RDS(ON)=19mΩ@VGS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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